Abstract: In this work, we demonstrate the enlargement of the memory window of Si channel FeFET with ferroelectric Hf0.5Zr0.5O2 by gate-side dielectric interlayer engineering. By inserting a 3 nm Al2 ...
Consider the words "man", "woman", "boy", and "girl". Two of them refer to males, and two to females. Also, two of them refer to adults, and two to children. We can ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results